View MTS9539G6_8378159.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

cystech electronics corp. spec. no. : c094g6 issued date : 2015.10.27 revised date : page no. : 1/13 MTS9539G6 cystek product specification n- and p-channel enhancement mode power mosfet MTS9539G6 description the MTS9539G6 consists of a n-channel and a p-channel enhancement-mode mosfet in a single tsop-6 package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the tsop-6 package is universally preferred for all commercial-industrial surface mount applications. features ? simple drive requirement ? low gate charge ? low on-resistance ? fast switching speed ? pb-free lead plating and halogen-free package ? esd diode protected gate (tr 1, n-channel) equivalent circuit outline ordering information device package shipping MTS9539G6-0-t1-g tsop-6 (pb-free lead plating and halogen-free package) 3000 pcs / tape & reel MTS9539G6 tsop-6 s2 g2 d1 g gate s source d drain g1 d2 s1 pin 1 environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, t1 : 3000 pcs / tape & reel, 7? reel product rank, zero for no rank products product name
cystech electronics corp. spec. no. : c094g6 issued date : 2015.10.27 revised date : page no. : 2/13 MTS9539G6 cystek product specification absolute maximum ratings (ta=25 c) limits parameter symbol n-channel p-channel unit drain-source breakdown voltage bv dss 60 -30 gate-source voltage v gs 220 220 v continuous drain current @t a =25 c (note 1) 0.6 -3.7 continuous drain current @t a =70 c (note 1) i d 0.48 -3.0 pulsed drain current (note 2) i dm 1.8 -30 a p d 1.14 w total power dissipation (note 1) linear derating factor 0.01 w / c operating junction and storage temperature tj, tstg -55~+150 c thermal resistance, junction-to-ambient (note 1) rth,ja 110 c/w note : 1.surface mounted on 1 in2 copper pad of fr-4 board, t 5 sec; 180 c/w when mounted on minimum copper pad 2. pulse width limited by maximum junction temperature n-channel electrical characteristics (tj=25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss 60 - - v gs =0v, i d =250 a v gs(th) 0.8 - 1.5 v v ds =3v, i d =100 a i gss - - 10 v gs =20v, v ds =0v - - 1 v ds =60v, v gs =0v i dss - - 10 a v ds =48v, v gs =0, tj=70 c - 1.0 2 i d =300ma, v gs =10v - 1.2 2.5 i d =100ma, v gs =4v *r ds(on) - 1.6 3 i d =10ma, v gs =2.5v *g fs 100 270 - ms v ds =10v, i d =100ma dynamic ciss - 36 - coss - 14 - crss - 1.3 - pf v ds =25v, v gs =0v, f=1mhz *t d(on) - 6 - *t r - 15.8 - *t d(off) - 14.8 - *t f - 21.4 - ns v ds =30v, i d =100ma, v gs =5v, r g =25 *qg - 1.12 - *qgs - 0.24 - *qgd - 0.44 - nc v ds =30v, i d =0.3a, v gs =4.5v source-drain diode *i s - - 0.6 *i sm - - 1.8 a *v sd - 0.79 1.2 v v gs =0v, i s =100ma *pulse test : pulse width 300 s, duty cycle 2%
cystech electronics corp. spec. no. : c094g6 issued date : 2015.10.27 revised date : page no. : 3/13 MTS9539G6 cystek product specification p-channel electrical characteristics (tj=25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss -30 - - v gs =0v, i d =-250 a v gs(th) -1 - -2.5 v v ds =v gs , i d =-250 a i gss - - 100 na v gs =20v, v ds =0v - - -1 v ds =-24v, v gs =0v i dss - - -25 a v ds =-24v, v gs =0v, tj=70 c - 43 54 i d =-5a, v gs =-10v - 53 69 i d =-3.7a, v gs =-4.5v *r ds(on) - 56 73 m i d =-3a, v gs =-4v *g fs - 3 - s v ds =-10v, i d =-1a dynamic ciss - 619 - coss - 76 - crss - 61 - pf v ds =-15v, v gs =0v, f=1mhz *t d(on) - 14.2 - *t r - 21.2 - *t d(off) - 45.8 - *t f - 24.2 - ns v ds =-10v, i d =-1a, v gs =-4.5v, r g =6 , r d =10 *qg - 6.4 - *qgs - 1.9 - *qgd - 1.8 - nc v ds =-10v, i d =-3.7a, v gs =-4.5v source-drain diode *i s - - -1 *i sm - - -4 a *v sd - -0.77 -1.2 v v gs =0v, i s =-1a *pulse test : pulse width 300 s, duty cycle 2%
cystech electronics corp. spec. no. : c094g6 issued date : 2015.10.27 revised date : page no. : 4/13 MTS9539G6 cystek product specification n-channel characteristic curves typical output characteristics 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 5 10 15 20 25 v ds , drain-source voltage(v) i d , drain current(a) 3v 3.5 v vgs=2v 2.5v 4v 10v,9v,8v,7v,6v,5v brekdown voltage vs junction temperature 0.8 0.9 1 1.1 1.2 -75 -50 -25 0 25 50 75 100 125 150 175 tj , junction temperature(c) bv dss , normalized drain-source breakdown voltage static drain-source on-state resistance vs drain current 0.1 1 10 0.001 0.01 0.1 1 i d , drain current(a) r ds(on) , static drain-source on-state resistance() v gs =2.5v v gs =4v v gs =10v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 0 0.2 0.4 0.6 0.8 1 i dr , reverse drain current(a) v sd , source-drain voltage(v) tj=25c tj=150c v gs =0v static drain-source on-state resistance vs gate-source voltage 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 024681 0 drain-source on-state resistance vs junction tempearture 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) r ds(on) , normalized static drain- source on-state resistance v gs =4v, i d =100ma r dson @tj=25c : 1.2typ. v gs =2.5v, i d =10ma r dson @tj=25c : 1.6typ. v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance() i d =100ma
cystech electronics corp. spec. no. : c094g6 issued date : 2015.10.27 revised date : page no. : 5/13 MTS9539G6 cystek product specification n-channel characteristic curves(cont.) capacitance vs drain-to-source voltage 1 10 100 0.1 1 10 100 drain-source voltage -vds(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 1.6 -75 -50 -25 0 25 50 75 100 125 150 175 junction temperature-tj(c) v gs(th) , normalized threshold voltage i d =250 a 1ma maximum safe operating area 0.01 0.1 1 10 0.01 0.1 1 10 100 v ds , drain-source voltage(v) i d , drain current (a) dc 10ms 100ms 1ms 100 s t a =25c, tj=150c v gs =10v, r ja =110/w single pulse r ds( on) limit 1s gate charge characteristics 0 1 2 3 4 5 6 7 8 9 10 0 0.4 0.8 1.2 1.6 2 2.4 qg, total gate charge(nc) v gs , gate-source voltage(v) v ds =30v i d =0.3a maximum drain current vs junctiontemperature 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 25 50 75 100 125 150 175 tj, junction temperature(c) i d , maximum drain current(a) t a =25c, tj=150c, v gs =10v r ja =110c/w, single pulse typical transfer characteristics 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.01.02.03.04.05.06.07.08.09.010.0 v gs , gate-source voltage(v) i d , drain current(a) v ds =10v
cystech electronics corp. spec. no. : c094g6 issued date : 2015.10.27 revised date : page no. : 6/13 MTS9539G6 cystek product specification n-channel characteristic curves(cont.) forward transfer admittance vs drain current 0.01 0.1 1 10 0.001 0.01 0.1 1 i d , drain current(a) g fs , forward transfer admittance-(s) pulsed ta=25c v ds =-15v v ds =-10v transient thermal response curves 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 t 1 , square wave pulse duration(s) r(t), normalized effectivetransient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t 1 /t 2 3.t jm -t a =p dm *r ja (t) 4.r j a =110 c/w
cystech electronics corp. spec. no. : c094g6 issued date : 2015.10.27 revised date : page no. : 7/13 MTS9539G6 cystek product specification p-channel characteristic curves typical output characteristics 0 5 10 15 20 25 30 012345 -v ds , drain-source voltage(v) -i d , drain current (a) -v gs =2v 2.5v 10v 9v 8v 7v 6v 3v 3.5v 4v 5v brekdown voltage vs junction temperature 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) -bv dss , normalized drain-source breakdown voltage i d =-250 a, v gs =0v static drain-source on-state resistance vs drain current 10 100 1000 0.001 0.01 0.1 1 10 -i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) in descending order v gs =-3v -4v -4.5v -10v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 0123456 -i dr , reverse drain current (a) -v sd , source-drain voltage(v) tj=25c tj=150c v gs =0v static drain-source on-state resistance vs gate-source voltage 0 50 100 150 200 250 300 350 400 450 500 024681 0 drain-source on-state resistance vs junction tempearture 0.4 0.8 1.2 1.6 2 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) r ds(on) , normalized static drain- source on-state resistance v gs =-10v, i d =-5a -v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) i d =-5a r dson @tj=25c : 43mtyp.
cystech electronics corp. spec. no. : c094g6 issued date : 2015.10.27 revised date : page no. : 8/13 MTS9539G6 cystek product specification p-channel characteristic curves(cont.) capacitance vs drain-to-source voltage 10 100 1000 0.1 1 10 100 -v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 1.6 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) -v gs(th) , normalized threshold voltage i d =-250 a i d =-1ma forward transfer admittance vs drain current 0.01 0.1 1 10 0.001 0.01 0.1 1 10 -i d , drain current(a) g fs , forward transfer admittance-(s) pulsed ta=25c v ds =-15v v ds =-10v gate charge characteristics 0 2 4 6 8 10 0246810121416 qg, total gate charge(nc) -v gs , gate-source voltage(v) v ds =-10v i d =-3.7a maximum safe operating area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 -v ds , drain-source voltage(v) -i d , drain current (a) dc 10ms 100ms 1ms 100 s t a =25c, tj=150c v gs =-10v, r ja =110c/w single pulse 1s maximum drain current vs junctiontemperature 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 25 50 75 100 125 150 175 tj, junction temperature(c) i d , maximum drain current(a) t a =25c, tj=150c, v gs =-10v r ja =110c/w, single pulse
cystech electronics corp. spec. no. : c094g6 issued date : 2015.10.27 revised date : page no. : 9/13 MTS9539G6 cystek product specification p-channel characteristic curves(cont.) typical transfer characteristics 0 5 10 15 20 25 30 0123456 -v gs , gate-source voltage(v) -i d , drain current(a) v ds =10v transient thermal response curves 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 t 1 , square wave pulse duration(s) r(t), normalized effectivetransient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t 1 /t 2 3.t jm -t a =p dm *r j a (t) 4.r ja =110 c/w
cystech electronics corp. spec. no. : c094g6 issued date : 2015.10.27 revised date : page no. : 10/13 MTS9539G6 cystek product specification reel dimension
cystech electronics corp. spec. no. : c094g6 issued date : 2015.10.27 revised date : page no. : 11/13 MTS9539G6 cystek product specification carrier tape dimension
cystech electronics corp. spec. no. : c094g6 issued date : 2015.10.27 revised date : page no. : 12/13 MTS9539G6 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of the package, measured on the package body surface.
cystech electronics corp. spec. no. : c094g6 issued date : 2015.10.27 revised date : page no. : 13/13 MTS9539G6 cystek product specification tsop-6 dimension marking: 6-lead tsop-6 plastic surface mounted package cystek package code: g6 style: pin 1. gate1 (g1) pin 2. source1 (s1) pin 3. drain2 (d2) pin 4. source2 (s2) pin 5. gate2 (g2) pin 6. drain1 ( d1 ) 9539 device name date code millimeters inches millimeters inches dim min. max. min. max. dim min. max. min. max. a 0.700 0.900 0.028 0.035 e 1.600 1.700 0.063 0.067 a1 0.000 0.100 0.000 0.004 e1 2.650 2.950 0.104 0.116 a2 0.700 0.800 0.028 0.031 e 0.95 (bsc) 0.037 (bsc) b 0.350 0.500 0.014 0.020 e1 1.90 (bsc) 0.075 (bsc) c 0.080 0.200 0.003 0.008 l 0.300 0.600 0.012 0.024 d 2.820 3.020 0.111 0.119 0 8 0 8 notes : 1.controlling dimension : millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing spec ification or packing method, please cont act your local cystek sales office. material : ? lead : pure tin plated. ? mold compound : epoxy resin family, flammability solid burning class:ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitab le for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .

▲Up To Search▲

Price & Availability of MTS9539G6

	To Download MTS9539G6 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .